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Product Detailed Parameters
- Description：IGBT 3000V 50A TO-268AA
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：140 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 20A
- Power - Max：250 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：105 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.35 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXBT20N300 is a high-voltage, high-gain BIMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It features a silicon technology and is housed in a D3PAK-3 (TO-268-3) surface-mount package. The device has a collector-emitter maximum voltage of 3 kV and a continuous collector current of 20 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.1 V, a gate-emitter maximum voltage range of -20 V to +20 V, and a power dissipation rating of 160 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Combines the advantages of MOSFETs and IGBTs through monolithic bipolar MOS technology
- Designed for high-voltage applications with a 3 kV breakdown capability
- Features high gain characteristics suitable for efficient switching
Applications
- High-frequency inverters
- Switch-mode power supplies
- Motor control circuits
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure that the ordering suffix matches the required packaging configuration, as standard tube packaging may differ from reel options. Confirm lead times and minimum order quantities with the supplier, as these are subject to change based on production schedules.
Selection Notes
Select this component for designs requiring high voltage isolation and moderate current handling in a compact surface-mount form factor. Consider the thermal management requirements due to the 160 W power dissipation rating and the 3.1 V saturation voltage. Ensure the gate drive circuitry supports the specified voltage limits and switching speeds appropriate for the target application frequency.
Part Context
This part belongs to the IXYS BIMOSFET family, which integrates MOS input impedance with IGBT output characteristics. It is designed for high-voltage switching applications where traditional IGBTs might be too slow or MOSFETs would suffer from excessive conduction losses. The TO-268-3 package allows for direct mounting to heat sinks for effective thermal management.
Replacement Considerations
Potential substitutes include the IXBF12N300 and IXBF15N300, which share similar high-voltage BIMOSFET characteristics. Verify pin compatibility and electrical ratings such as current handling and saturation voltage when considering cross-replacement.
