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The IXBT2N250-TR is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and is housed in a D3PAK-3 (TO-268-3) surface-mount package. The device features a maximum collector-emitter voltage of 2.5 kV and a continuous collector current of 13 A. Key electrical parameters include a collector-emitter saturation voltage of 3.1 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 32 W. It operates within a temperature range of -55 °C to +150 °C.
Verify the specific suffix against official manufacturer documentation to confirm tape-and-reel packaging and exact electrical tolerances. Ensure the component matches the required thermal management specifications for the intended application environment. Cross-reference datasheet revisions to validate pinout compatibility and parameter consistency before integration into production designs.
Select this component when a surface-mount IGBT with high voltage blocking capability is required. The TO-268-3 package facilitates PCB mounting while maintaining adequate thermal conductivity. Consider the 32 W power dissipation limit and ensure appropriate heatsinking is implemented to maintain junction temperatures within the specified operational range during continuous switching cycles.
This part belongs to the IXYS IGBT transistor family, specifically designed for high-voltage switching applications. The IXBT series typically offers optimized trade-offs between conduction losses and switching speeds. The TR suffix indicates tube or reel packaging variations depending on the specific manufacturing lot and distributor handling protocols.
Direct substitutes may include other IXYS single IGBTs in the D3PAK-3 package with comparable 2.5 kV ratings, such as the IXGT2N250. Verify pinout alignment and thermal resistance characteristics before substitution.