IXBT2N250-TR

IXBT2N250-TR

$11.65
  • Description:IGBT 2500V 5A TO-268
  • Series:BIMOSFET™

SKU:f59f9983c87b Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 2500V 5A TO-268
  • Series:BIMOSFET™
  • Mfr:IXYS
  • Package:Tape & Reel (TR)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):2500 V
  • Current - Collector (Ic) (Max):5:00 AM
  • Current - Collector Pulsed (Icm):13 A
  • Vce(on) (Max) @ Vge, Ic:3.5V @ 15V, 2A
  • Power - Max:32 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:10.6 nC
  • Td (on/off) @ 25°C:30ns/70ns
  • Test Condition:2000V, 2A, 47Ohm, 15V
  • Reverse Recovery Time (trr):920 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package:TO-268
  • Grade:-
  • Qualification:-

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IXBT2N250-TR

Overview

The IXBT2N250-TR is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and is housed in a D3PAK-3 (TO-268-3) surface-mount package. The device features a maximum collector-emitter voltage of 2.5 kV and a continuous collector current of 13 A. Key electrical parameters include a collector-emitter saturation voltage of 3.1 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 32 W. It operates within a temperature range of -55 °C to +150 °C.

Feature Summary

  • High-voltage capability with a 2.5 kV blocking voltage rating for robust switching performance.
  • Surface-mount construction in a D3PAK-3 package designed for automated assembly processes.
  • Single configuration providing independent control for high-side or low-side applications.

Applications

  • Industrial motor drive inverters
  • High-frequency welding power supplies
  • Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm tape-and-reel packaging and exact electrical tolerances. Ensure the component matches the required thermal management specifications for the intended application environment. Cross-reference datasheet revisions to validate pinout compatibility and parameter consistency before integration into production designs.

Selection Notes

Select this component when a surface-mount IGBT with high voltage blocking capability is required. The TO-268-3 package facilitates PCB mounting while maintaining adequate thermal conductivity. Consider the 32 W power dissipation limit and ensure appropriate heatsinking is implemented to maintain junction temperatures within the specified operational range during continuous switching cycles.

Part Context

This part belongs to the IXYS IGBT transistor family, specifically designed for high-voltage switching applications. The IXBT series typically offers optimized trade-offs between conduction losses and switching speeds. The TR suffix indicates tube or reel packaging variations depending on the specific manufacturing lot and distributor handling protocols.

Replacement Considerations

Direct substitutes may include other IXYS single IGBTs in the D3PAK-3 package with comparable 2.5 kV ratings, such as the IXGT2N250. Verify pinout alignment and thermal resistance characteristics before substitution.

IXBT2N250-TRIXBT2N250-TR
$11.65
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