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Product Detailed Parameters
- Description：IGBT 3000V 80A TO-268AA
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：280 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 32A
- Power - Max：400 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：142 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.5 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXBT32N300 is a high-voltage, high-gain BIMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It features a collector-emitter breakdown voltage of 3000V and a continuous collector current of 32A at 25°C. The device supports a pulse collector current of 110A and maintains a low saturation voltage of 3.2V. Designed for through-hole mounting, it utilizes the TO-268HV package configuration. The component operates within a junction temperature range of -55°C to 150°C and offers robust electrical isolation capabilities suitable for demanding power electronics environments.
Feature Summary
- Utilizes Silicon Chip on Direct-Copper Bond (DCB) substrate technology for enhanced thermal performance
- Provides isolated mounting surface with 3000V electrical isolation capability
- Features low gate drive requirements to simplify control circuitry design
- Delivers high blocking voltage and low conduction losses for efficient power switching
Applications
- Switched-Mode Power Supplies
- Resonant-Mode Power Supplies
- Uninterruptible Power Supplies (UPS)
- Laser Generators
- Capacitor Discharge Circuits
Procurement Notes
Verify the specific suffix designation against official IXYS documentation to confirm exact pinout and thermal characteristics. Ensure the procurement channel provides authentic manufacturer data sheets. Confirm compliance with RoHS directives if required by the target application. Validate that the TO-268HV package dimensions match the PCB footprint specifications precisely before integration.
Selection Notes
Select this component for applications requiring high voltage blocking capabilities up to 3000V. Consider the 32A continuous current rating for steady-state load conditions. Evaluate the thermal management requirements given the 150°C maximum junction temperature limit. Compare the low saturation voltage against alternative devices to optimize overall system efficiency in high-power conversion stages.
Part Context
This device belongs to the IXYS BIMOSFET family, combining the advantages of bipolar and MOS technologies. It is designed for high-frequency, high-voltage switching applications. The product line emphasizes high gain and low conduction losses. It serves as a critical component in industrial power systems where reliability under extreme electrical stress is mandatory.
Replacement Considerations
Cross-reference with other IXYS models in the 3000V class such as the IXBF series for potential form-fit-function compatibility. Verify that any substitute maintains the same TO-268HV package and electrical isolation ratings. Consult official substitution guides from the manufacturer to ensure equivalent thermal and switching performance.
