ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 3000V 80A TO-268HV
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：280 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 32A
- Power - Max：400 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：142 nC
- Td (on/off) @ 25°C：50ns/160ns
- Test Condition：1250V, 32A, 2Ohm, 15V
- Reverse Recovery Time (trr)：1500 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268HV (IXBT)
- Grade：-
- Qualification：-
Download product information
Overview
The IXBT32N300HV is a high-voltage, high-gain BIMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It features a collector-emitter breakdown voltage (V_CES) of 3000 V and a continuous collector current (I_C110) of 32 A at 110°C. The device exhibits a collector-emitter saturation voltage (V_CE(sat)) of 3.2 V. It is housed in a TO-268HV package with a maximum power dissipation of 160 W. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High voltage capability with 3000 V collector-emitter breakdown rating
- Monolithic integration of bipolar and MOS technologies for high gain
- Designed for surface mount installation in TO-268HV packages
Applications
- High voltage switching applications
- Industrial power conversion systems
- Motor drive circuits requiring high isolation voltages
Procurement Notes
Verify the specific datasheet version and revision date before procurement, as electrical characteristics may vary between manufacturing batches. Confirm that the TO-268HV package dimensions match the target PCB footprint. Ensure thermal management solutions are adequate for the specified 160 W power dissipation limit under actual operating conditions.
Selection Notes
Select this component when a single-switch solution requires 3 kV blocking capability with moderate current handling. The TO-268HV package offers a balance between thermal performance and mounting density. Compare saturation voltage and gate charge requirements against alternative high-voltage IGBTs to ensure compatibility with existing gate drive circuitry.
Part Context
This part belongs to IXYS' Very High Voltage series, specifically utilizing the BIMOSFET technology. It is designed for applications demanding robust high-voltage switching in compact form factors. The TO-268HV package is optimized for surface-mount assembly while maintaining high insulation and thermal performance standards.
Replacement Considerations
Direct replacements include the IXBH32N300HV, which shares identical electrical specifications and pinout configuration. Verify mechanical compatibility and thermal resistance values when substituting with other 3 kV IGBTs in the TO-268HV package.
