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Product Detailed Parameters
- Description：IGBT 1700V 80A TO-268AA
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 42A
- Power - Max：360 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：188 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.32 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXBT42N170 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS BIMOSFET series. It features a D3PAK-3 (TO-268-3) surface-mount package with a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 75 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.8 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 360 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Utilizes NPT technology for robust high-voltage performance
- Designed for surface-mount installation in compact layouts
- Provides high thermal stability across wide operating temperatures
Applications
- Industrial motor drives
- High-frequency welding equipment
- Uninterruptible power supplies
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before integration. Confirm that the D3PAK-3 footprint matches the target PCB design. Ensure thermal management solutions align with the 360 W power dissipation rating under actual operating conditions.
Selection Notes
Select this component when a single IGBT with 1.7 kV blocking capability and 75 A continuous current is required in a surface-mount form factor. Compare the 2.8 V saturation voltage against alternative packages like TO-247 if lower conduction losses are critical. Evaluate thermal resistance requirements based on the specific application's heat sinking capabilities.
Part Context
This part belongs to the IXYS BIMOSFET family of high-voltage IGBTs. It shares electrical characteristics with other models in the series but differs in packaging. The D3PAK-3 variant offers a compact solution compared to through-hole options, suitable for automated assembly processes in modern electronic manufacturing.
Replacement Considerations
Cross-reference with IXYS models sharing the same electrical ratings and TO-268-3 package, such as the IXGT series variants, ensuring pinout compatibility and thermal performance match.
