ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 1700V 12A TO-268AA
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：12:00 AM
- Current - Collector Pulsed (Icm)：36 A
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 6A
- Power - Max：75 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：17 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.08 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
Download product information
Overview
The IXBT6N170 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the BIMOSFET series, manufactured by IXYS. It features a D3PAK-3 (TO-268-3) surface-mount package and supports screw or SMD mounting configurations. The device handles a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 12 A at 25°C, with a peak current rating of 36 A. Key electrical parameters include a saturation voltage of 3.4 V, gate-emitter limits of ±20 V, and power dissipation of 75 W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Utilizes NPT (Non-Punch Through) technology for robust high-voltage performance
- Designed for low conduction losses via optimized saturation voltage characteristics
- Features fast switching capabilities suitable for high-frequency applications
Applications
- High-voltage motor drive systems
- Induction heating equipment
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies (SMPS)
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent package degradation during assembly processes.
Selection Notes
Select this component for designs requiring 1.7 kV blocking capability in a compact surface-mount form factor. Evaluate thermal management needs against the 75 W dissipation limit. Compare saturation voltage and switching speeds against alternative IGBTs to ensure compatibility with specific circuit efficiency targets and gate drive constraints.
Part Context
This part belongs to the IXYS BIMOSFET family of high-voltage IGBTs. It shares the 1.7 kV voltage class with other models like the IXGT6N170 but differs in packaging and specific electrical thresholds. The TO-268-3 package allows for efficient PCB mounting compared to through-hole alternatives.
Replacement Considerations
Direct substitutes within the same voltage and current ratings should be evaluated based on package compatibility and pinout alignment. Verify that replacement devices meet identical thermal resistance and switching speed specifications to maintain system performance integrity.
