IXBX55N300

Overview

The IXBX55N300 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the IXYS Very High Voltage series, utilizing BIMOSFET technology. It features a TO-264-3 through-hole package with an isolated mounting surface for direct heatsink attachment. The device supports a collector-emitter voltage of 3 kV and a continuous collector current of 130 A at 25°C. Key electrical parameters include a saturation voltage of 3.2 V, power dissipation of 625 W, and a gate-emitter voltage range of -25 V to +25 V. Operating temperatures span from -55°C to +150°C.

Feature Summary

• High-voltage capability up to 3 kV using specialized BIMOSFET structure
• Isolated mounting surface enables direct thermal coupling to heatsinks
• Robust 130 A continuous current handling in standard packages

Applications

• High-voltage industrial motor drives
• Resonant mode power supplies
• Capacitor discharge circuits
• Laser generators

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before finalizing procurement. Confirm that the TO-264-3 pinout matches the target PCB footprint design. Ensure thermal interface materials are compatible with the isolated backside construction to maintain specified thermal resistance values during assembly.

Selection Notes

Select this component when system requirements demand high blocking voltages exceeding standard 1.2 kV IGBT limits while maintaining manageable drive currents. The 3.2 V saturation voltage offers a balance between conduction losses and switching performance. Verify that the application circuit can accommodate the required gate drive voltage swing of ±25 V for reliable turn-on and turn-off operations under varying load conditions.

Part Context

This device belongs to the IXYS Very High Voltage discrete IGBT family, designed for demanding power conversion applications. The BIMOSFET technology integrates MOS input control with bipolar output conductivity modulation. This architecture allows for efficient switching at voltages significantly higher than conventional silicon devices, making it suitable for specialized industrial and scientific equipment requiring robust high-voltage isolation.

Replacement Considerations

Direct replacements must match the 3 kV rating, TO-264-3 package, and similar current capabilities. Cross-reference specific part numbers such as IXBF20N360 for lower current but higher voltage needs, ensuring pin compatibility and thermal characteristics align with the existing design constraints.