IXBX75N170

Overview

The IXBX75N170 is a BiMOSFET monolithic bipolar MOS transistor manufactured by IXYS. It features an N-channel IGBT structure with an integrated anti-parallel diode in a TO-264 (PLUS247) package. Key electrical parameters include a maximum collector-emitter voltage of 1700 V and a continuous collector current of 75 A, with a peak current rating of 200 A. The device exhibits a maximum collector-emitter saturation voltage of 3.1 V at 75 A and a rated turn-off time of 840 ns. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Monolithic integration of IGBT and anti-parallel diode for compact circuit design
• High blocking voltage capability suitable for high-power applications
• Low gate drive requirement facilitating efficient control interface

Applications

• Capacitor discharge circuits
• AC switches
• Switch-mode power supplies
• Resonant-mode power supplies
• Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status prior to ordering, as manufacturing specifications may evolve. Confirm that the TO-264 (PLUS247) through-hole package aligns with your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified power dissipation limits under your operating conditions. Cross-reference part numbers carefully to distinguish between standard and alternative suffix variants if applicable.

Selection Notes

Select this component when high voltage isolation and high current handling are required in a single discrete package. The integrated diode simplifies designs for inductive loads or resonant topologies where freewheeling paths are necessary. Consider the 1700V rating for medium-voltage industrial systems. Evaluate the thermal resistance characteristics against your heat sink capabilities to ensure reliable operation within the 150°C junction temperature limit.

Part Context

This device belongs to the IXYS BiMOSFET family, which combines MOS input impedance with bipolar output characteristics. The IXBX series specifically targets high-power density applications requiring robust switching performance. It serves as a discrete solution compared to modular IGBT assemblies, offering flexibility for custom power electronics designs while maintaining standard international package dimensions for ease of integration.

Replacement Considerations

Publicly confirmed substitute part numbers for IXBX75N170 were not found in the provided source material. Verify compatibility with equivalent high-voltage IGBTs from other manufacturers based on pinout, voltage ratings, and thermal characteristics before substitution.