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The IXDH30N120D1 is a high-voltage NPT IGBT with an optional ultra-fast diode, rated at 1200 V collector-emitter voltage and 60 A continuous collector current. It features low saturation voltage and low switching losses for efficient power conversion. The device exhibits square RBSOA without latch-up and offers high short-circuit capability. Designed for easy paralleling due to its positive temperature coefficient, it utilizes MOS input voltage control. The component is housed in an ISOPLUS247-3 through-hole package.
Verify the specific suffix D1 confirms the inclusion of the integrated ultra-fast diode, as standard variants may lack this feature. Confirm the manufacturer status, as IXYS assets are often managed by Littelfuse or other entities post-acquisition. Ensure the ISOPLUS247-3 package dimensions match the target PCB layout requirements before finalizing procurement orders.
Select this component when high voltage blocking capability and moderate current handling are required in a single package. The integrated diode simplifies circuit design for half-bridge or flyback topologies. Consider the thermal management needs associated with the TO-247 style package and the specific switching loss characteristics under the intended operating frequency and load conditions.
This part belongs to the IXYS high-voltage IGBT portfolio, specifically utilizing NPT technology. It is designed for industrial power applications requiring reliable switching performance. The device represents a solution for compact power electronics where space constraints necessitate integrated freewheeling diodes alongside the main switching element.
The IXDH30N120D1 datasheet lists the IXDH30N120 as a similar part number. Verify if the non-D1 variant lacks the integrated diode. Cross-reference pinouts and thermal resistance values with alternative manufacturers' 1200V IGBTs in the ISOPLUS247-3 package to ensure mechanical and electrical compatibility.