IXDH35N60B

Overview

The IXDH35N60BD1 is a phase-out HiPerFAST IGBT with an optional ultra-fast diode, utilizing NPT technology. It features a 600 V collector-emitter voltage rating and a continuous collector current of 60 A at 25°C or 35 A at 90°C case temperature. The device offers a typical saturation voltage of 2.1 V and supports short-circuit withstand times up to 10 µs. It is available in TO-247AD and TO-220 packages.

Feature Summary

• NPT IGBT technology providing low switching losses and no latch-up
• Integrated ultra-fast FRED diode for space savings and high power density
• Positive temperature coefficient facilitating easy paralleling
• Short circuit capability with MOS gate input for voltage control

Applications

• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies

Procurement Notes

Verify the specific package variant required, as the datasheet covers both TO-247AD and TO-220 configurations. Confirm that the integrated diode version (suffix D1) matches the design requirements, as discrete IGBT options exist within the series. Check for active replacement components due to the phase-out status indicated in the documentation.

Selection Notes

Select this component for medium-power applications requiring robust short-circuit handling and efficient switching. Ensure thermal management aligns with the specified junction temperature range of -55°C to +150°C. Verify gate drive compatibility with the ±15 V operating limits and consider the total gate charge when designing driver circuits.

Part Context

This device belongs to the IXYS HiPerFAST family of NPT IGBTs. It combines high-speed switching characteristics with a built-in fast recovery diode. The product line targets industrial power conversion and motor control systems where reliability and compact form factors are critical design constraints.

Replacement Considerations

Public confirmed substitute part numbers: None identified.