IXDN75N120

Overview

The IXDN75N120 is a 100 A, 1200 V N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a MINIBLOC-4 flange mount package with four terminals and an isolated collector connection. The device includes a built-in anti-parallel diode and utilizes silicon technology. Key electrical parameters include a maximum rated off-time of 570 ns and a rated on-time of 170 ns. It is designed for motor control applications and complies with EU RoHS standards.

Feature Summary

• Integrated anti-parallel diode structure
• Isolated collector connection for mounting
• Flange mount package design

Applications

• Motor control systems

Procurement Notes

Verify the specific manufacturer lot codes and date codes against current production status. Confirm that the component meets required environmental compliance standards for the intended deployment region. Ensure the packaging integrity remains intact during handling to prevent damage to the flange mount terminals.

Selection Notes

Select this component for high-current applications requiring integrated freewheeling capabilities. The MINIBLOC-4 package facilitates efficient thermal management through direct chassis mounting. Evaluate the 570 ns turn-off time against system switching frequency requirements to ensure optimal performance and efficiency in power conversion circuits.

Part Context

This IGBT belongs to the IXYS discrete semiconductor portfolio, specifically engineered for power electronics. It represents a monolithic solution combining switching and rectification functions. The part is distinct from MOSFET offerings due to its bipolar conduction characteristics and higher voltage tolerance suitable for industrial power stages.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.