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The IXDR30N120D1 is a single NPT silicon IGBT manufactured by IXYS, housed in an ISOPLUS247-3 through-hole package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 60 A at 25°C. The device has a power dissipation rating of 200 W and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a saturation voltage of 2.4 V, a gate-emitter leakage current of 500 nA, and a thermal resistance from junction to case of 0.55 °C/W.
Verify component authenticity through authorized IXYS distributors or certified agents. Confirm RoHS compliance status using official documentation. Check for obsolescence notices as the part may be discontinued. Ensure storage conditions meet moisture sensitivity level requirements before assembly.
Select this component for applications requiring 1200 V blocking capability with moderate current handling. Compare saturation voltage and thermal resistance against alternative packages like TO-247 for specific cooling constraints. Verify gate drive compatibility with standard voltage levels.
This device belongs to the IXDR30N120 series of high-voltage IGBTs. It shares core electrical specifications with other variants in the family but differs in packaging and mounting style. The ISOPLUS247-3 form factor distinguishes it from standard TO-247 devices.
Direct substitutes are not explicitly listed in public documentation. Evaluate alternatives based on matching 1200 V rating, 60 A current capacity, and similar saturation voltage. Ensure pinout compatibility if replacing within existing PCB layouts.