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The IXDR35N120D1 is a high-voltage NPT IGBT from IXYS, housed in an ISOPLUS package with an electrically isolated back side. It features a collector-emitter voltage of 1200V and a continuous collector current of 35A. The device exhibits low saturation voltage and low switching losses, supported by short circuit capability and square RBSOA. Designed for robust performance, it operates within a junction temperature range of -55°C to +150°C.
Verify component authenticity through authorized IXYS channels or certified distributors. Confirm datasheet revision status and RoHS compliance prior to integration. Ensure thermal management design aligns with specified operating temperatures and short circuit ratings to maintain reliability.
Select this component for applications requiring high voltage isolation and robust short circuit withstand capability. The ISOPLUS package offers efficient thermal dissipation. Consider the specific switching loss parameters and saturation voltage requirements against alternative IXYS series parts like the IXER or IXSK variants for optimal system efficiency.
This part belongs to the IXYS high-voltage IGBT portfolio, specifically designed for industrial power conversion. It complements other IXYS devices such as the IXSK35N120BD1 and IXER35N120D1, offering distinct packaging and electrical characteristics tailored for medium-power inverter and converter topologies.
Direct substitutes include IXYS models with identical pinouts and electrical ratings, such as the IXGR35N120BD1. Verify package compatibility and thermal resistance values when cross-referencing with similar high-voltage IGBTs from the manufacturer's catalog.