IXDT30N120

Overview

The IXDT30N120 is a surface-mount NPT IGBT from IXYS, housed in a TO-268-3 package. It features a collector-emitter voltage of 1200V and a continuous collector current of 60A. The device has a power dissipation rating of 300W and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a gate charge of 120nC. This component is designed for high-voltage switching applications requiring robust performance in a compact form factor.

Feature Summary

• Utilizes Non-Punch-Through (NPT) technology for stable switching characteristics.

Applications

• High-voltage power conversion systems

Procurement Notes

Verify the obsolete status indicated in available records before procurement planning. Confirm availability through authorized distributors or secondary markets as standard supply may be discontinued. Ensure compatibility with existing thermal management solutions given the 300W dissipation rating in the TO-268-3 package.

Selection Notes

Select this component for designs requiring a 1200V rated IGBT in a surface-mount configuration. Consider the 60A current capacity and 120nC gate charge when designing drive circuits. Evaluate thermal resistance requirements against the 300W power dissipation limit to ensure reliable operation within the specified temperature range.

Part Context

This part belongs to the IXYS discrete transistor portfolio, specifically targeting industrial and power electronics markets. The TO-268-3 package offers a balance between thermal performance and mounting convenience for automated assembly processes. As an NPT device, it provides specific advantages in short-circuit ruggedness compared to other technologies.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout and parameter compatibility if considering alternative manufacturers' offerings.