ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT NPT 1200V 36A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：36 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 25A
- Power - Max：200 W
- Switching Energy：4.1mJ (on), 1.5mJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：-
- Test Condition：600V, 20A, 68Ohm, 15V
- Reverse Recovery Time (trr)：130 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
Download product information
Overview
The IXEH25N120D1 is a 1200 V NPT3 IGBT with an integrated HiPerFRED diode in a TO-247 package. It features a positive temperature coefficient for easy paralleling and fast switching with short tail current. Maximum ratings include 36 A continuous collector current at 25°C case temperature, 1200 V collector-emitter voltage, and 200 W power dissipation. The device exhibits typical saturation voltage of 2.6 V at 25°C and reverse recovery time of 130 ns for the diode.
Feature Summary
- NPT3 IGBT technology with positive temperature coefficient for parallel operation
- Fast switching performance with optimized short tail current for resonant circuits
- Integrated HiPerFRED diode featuring fast reverse recovery and low leakage current
Applications
- AC drives
- DC drives and choppers
- Uninterruptible power supplies (UPS)
- Switched-mode and resonant-mode power supplies
- Inductive heating cookers
Procurement Notes
Verify the specific ordering suffix D1 to confirm the inclusion of the HiPerFRED diode, as the base model may differ. Ensure the TO-247 AD package outline matches your PCB footprint requirements. Cross-reference thermal resistance values against your heatsink design to maintain junction temperatures within the specified -55°C to +150°C range during operation.
Selection Notes
Select this component for high-voltage applications requiring robust switching characteristics and paralleling capability. The NPT3 structure offers improved ruggedness compared to earlier generations. Consider the integrated diode's reverse recovery speed when designing resonant or high-frequency converters. Verify gate drive compatibility with the specified threshold and saturation voltage parameters.
Part Context
This part belongs to the IXYS IXEH series of high-performance IGBTs designed for industrial power conversion. The D1 suffix denotes the version equipped with a complementary fast recovery diode. The series utilizes NPT3 technology to enhance short-circuit withstand capability and thermal stability, making it suitable for demanding motor drive and power supply environments.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided datasheet.
FAQ
What is the difference between the IXEH25N120 and IXEH25N120D1?
The IXEH25N120D1 includes an optional HiPerFRED diode, whereas the standard IXEH25N120 does not specify this integrated diode configuration.
What is the maximum non-repetitive short-circuit time?
The device supports a non-repetitive short-circuit time of 10 µs under specified conditions of VCE = 900V, VGE = ±15 V, RG = 68 Ω, and TVJ = 125°C.
How does the positive temperature coefficient benefit circuit design?
It allows for easy paralleling of multiple devices without the risk of thermal runaway, ensuring balanced current sharing among parallel-connected IGBTs.
