IXEN60N120

IXEN60N120

  • Description:IGBT MOD 1200V 100A 445W SOT227B
  • Series:-

SKU:968d4d451a78 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 1200V 100A 445W SOT227B
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:NPT
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 60A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227B
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):100 A
  • Power - Max:445 W
  • Current - Collector Cutoff (Max):800 µA
  • Input Capacitance (Cies) @ Vce:3.8 nF @ 25 V

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IXEN60N120

Overview

The IXYS IXEN60N120 is a single NPT3 IGBT in a miniBLOC (SOT-227 B) package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C case temperature. The saturation voltage is typically 2.1 V at 60 A and 25°C, rising to 2.5 V at 125°C. Switching characteristics include a turn-on delay of 80 ns and a turn-off delay of 680 ns. Thermal resistance from junction to case is 0.28 K/W. The device supports a maximum operating junction temperature of 150°C.

Feature Summary

  • NPT3 technology provides low saturation voltage and positive temperature coefficient for easy paralleling.
  • Fast switching with short tail current optimized for resonant circuits.
  • miniBLOC package includes isolated copper base plate, screw terminals, and Kelvin emitter terminal.

Applications

  • Single switches
  • Choppers with complementary free wheeling diode
  • Phaselegs, H bridges, three phase bridges for power supplies, UPS, AC/DC drives, and induction heating

Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to confirm component configuration. The standard IXEN60N120 contains only the IGBT, while the D1 variant includes an integrated HiPerFRED diode. Confirm package dimensions and mounting torque requirements before integration.

Selection Notes

Select the IXEN60N120 for high-voltage applications requiring robust NPT3 technology. Ensure thermal management meets the 0.28 K/W junction-to-case requirement. Consider the D1 version if a complementary fast-recovery diode is needed within the same package outline.

Part Context

This component belongs to the IXEN series of medium-speed IGBTs designed for industrial power conversion. It utilizes NPT3 technology to balance conduction losses and switching performance. The miniBLOC package facilitates high-current handling through screw-mounted connections.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate drive circuits due to specific switching time parameters.

IXEN60N120IXEN60N120

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