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The IXYS IXEN60N120 is a single NPT3 IGBT in a miniBLOC (SOT-227 B) package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C case temperature. The saturation voltage is typically 2.1 V at 60 A and 25°C, rising to 2.5 V at 125°C. Switching characteristics include a turn-on delay of 80 ns and a turn-off delay of 680 ns. Thermal resistance from junction to case is 0.28 K/W. The device supports a maximum operating junction temperature of 150°C.
Verify the specific ordering suffix against the manufacturer datasheet to confirm component configuration. The standard IXEN60N120 contains only the IGBT, while the D1 variant includes an integrated HiPerFRED diode. Confirm package dimensions and mounting torque requirements before integration.
Select the IXEN60N120 for high-voltage applications requiring robust NPT3 technology. Ensure thermal management meets the 0.28 K/W junction-to-case requirement. Consider the D1 version if a complementary fast-recovery diode is needed within the same package outline.
This component belongs to the IXEN series of medium-speed IGBTs designed for industrial power conversion. It utilizes NPT3 technology to balance conduction losses and switching performance. The miniBLOC package facilitates high-current handling through screw-mounted connections.
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate drive circuits due to specific switching time parameters.