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The IXYS IXER60N120 is a single NPT3 silicon IGBT in an ISOPLUS 247 package. It features a collector-emitter voltage of 1200 V and continuous collector currents of 95 A at 25°C or 60 A at 90°C case temperature. The device has a maximum power dissipation of 375 W, a saturation voltage of 2.1 V to 2.7 V, and operates within a junction temperature range of -55°C to +150°C.
Verify the component status as the datasheet explicitly marks the IXER60N120 as phase-out. Confirm availability through authorized distributors and check for valid replacement part numbers from IXYS before finalizing procurement plans.
Select this component for high-voltage applications requiring robust thermal performance and reliable switching. Ensure the design accommodates the specified isolation voltage of 2500 Vrms and mounting force requirements of 20 to 120 N for proper installation.
This device belongs to the IXER series of single IGBT transistors manufactured by IXYS. It utilizes standard industry pinouts and outlines compatible with TO-247 AD mechanical standards, excluding specific screw hole dimensions.
Public confirmed substitute part numbers are not available in the provided documentation.
The maximum isolation voltage (VISOL) is rated at 2500 Vrms when tested with an isolation current of 1 mA at 50/60 Hz.
It features fast switching characteristics and a short tail current, which are specifically designed to optimize performance in resonant circuit applications.
The datasheet specifies a recommended mounting force with clip ranging from 20 N to 120 N.