IXFA5N50P3

$1.15

Description：MOSFET N-CH 500V 5A TO263
Series：HiPerFET™, Polar3™
Mfr：IXYS
Package：Tube

SKU:5200554efe2f Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXFA5N50P3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 500V 5A TO263. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFA5N50P3

Description：MOSFET N-CH 500V 5A TO263
Series：HiPerFET™, Polar3™
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.65Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：6.9 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：370 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：114W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263AA (IXFA)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IXFA5N50P3

IXFA5N50P3

Single FETs, MOSFETs Overview

The IXFA5N50P3 is an obsolete N-Channel MOSFET from the HiPerFET and Polar3 series, manufactured by IXYS. It features a 500V drain-source voltage (Vdss) and a continuous drain current of 5A at case temperature. The device utilizes a TO-263AA (IXFA) surface mount package with a maximum power dissipation of 114W. Key electrical parameters include a gate threshold voltage of 5V at 1mA, a maximum gate charge of 6.9nC at 10V, and an on-resistance of 1.65 Ohm at 2.5A and 10V. It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Utilizes Polar3 technology for high-voltage performance in a compact surface-mount form factor.

Single FETs, MOSFETs Applications

Single FETs, MOSFETs Procurement Notes

Verify component obsolescence status prior to design finalization, as the IXFA5N50P3 is no longer manufactured. Confirm that the specific TO-263AA package dimensions align with existing PCB footprints. Ensure that thermal management strategies account for the 114W power dissipation limit under actual operating conditions rather than theoretical maximums.

Single FETs, MOSFETs Selection Notes

Select this component only if legacy compatibility with the HiPerFET Polar3 family is required. Evaluate alternative surface-mount packages such as TO-263AB or D2PAK for modern designs requiring similar voltage ratings. Consider the low current capacity of 5A when determining suitability for power switching applications compared to higher-current alternatives.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiPerFET and Polar3 series, designed for high-voltage power switching applications. The Polar3 technology integrates fast body diodes with low on-resistance characteristics. The TO-263AA package provides a balance between thermal performance and space efficiency for surface-mount assembly.