Single FETs, MOSFETs IXFE23N100 product image

IXFE23N100

$24.86
  • Description:MOSFET N-CH 1000V 21A SOT227B
  • Series:HiPerFET™
  • Mfr:IXYS
  • Package:Box

SKU:c8705d1de963 Category: Brand:

  
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IXFE23N100 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 1000V 21A SOT227B. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFE23N100

  • Description:MOSFET N-CH 1000V 21A SOT227B
  • Series:HiPerFET™
  • Mfr:IXYS
  • Package:Box
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):1000 V
  • Current - Continuous Drain (Id) @ 25°C:21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:430mOhm @ 11.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs:250 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:7000 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):500W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Supplier Device Package:SOT-227B
  • Package / Case:SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for IXFE23N100

IXFE23N100

Single FETs, MOSFETs Overview

The IXFE23N100 is a single N-Channel MOSFET module from the HiPerFET series, manufactured by IXYS. It features a drain-to-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 21 A at case temperature. The device has a maximum on-resistance (Rds(on)) of 500 mΩ and a power dissipation rating of 500 W. It utilizes SOT-227B (ISOPLUS227) chassis mount packaging with screw mounting style. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • High-voltage capability suitable for demanding power switching applications
  • Low on-state resistance for efficient conduction
  • Robust thermal performance with high power dissipation rating
  • Chassis mount design for secure mechanical installation

Single FETs, MOSFETs Applications

  • High-voltage DC-DC converters
  • Induction heating systems
  • Motor control drives
  • Uninterruptible power supplies (UPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and electrical test conditions before integration. Confirm that the SOT-227B package dimensions match the thermal interface requirements. Ensure proper torque specifications are applied during screw mounting to maintain reliable electrical contact and heat transfer. Check for any recent lifecycle status updates regarding availability or obsolescence.

Single FETs, MOSFETs Selection Notes

Select this component when a single N-Channel MOSFET with 1000 V blocking voltage and approximately 21 A current handling is required. The low Rds(on) makes it suitable for applications prioritizing conduction losses. Consider the chassis mount form factor if PCB space is limited but heatsink integration is feasible. Compare switching speeds and gate charge requirements against the driver capabilities in the target circuit design.

Single FETs, MOSFETs Part Context

The IXFE23N100 belongs to the HiPerFET family of high-performance MOSFETs designed for hard-switching applications. These modules integrate optimized silicon technology to minimize switching losses while maintaining high voltage withstand capability. The ISOPLUS227 package provides a standardized footprint for easy replacement and thermal management in industrial power electronics.

Single FETs, MOSFETs Replacement Considerations

The IXFE24N100 is a confirmed substitute part number within the same product line. Verify pinout compatibility and ensure that the slight variations in electrical parameters do not impact the system's safety margins or thermal design.

IXFE23N100IXFE23N100
$24.86
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