ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IXFH14N100Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 1000V 14A TO247AD. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXFH14N100Q
- Description：MOSFET N-CH 1000V 14A TO247AD
- Series：HiPerFET™
- Mfr：IXYS
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：750mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs：170 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247AD (IXFH)
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for IXFH14N100Q
Single FETs, MOSFETs Overview
The IXFH14N100Q is an N-channel enhancement mode silicon MOSFET from the IXYS Polar series, housed in a TO-247AD flange-mount package. It features a maximum drain-source voltage of 1000 V and a continuous drain current of 14 A. The device has a maximum on-resistance of 0.75 Ω and operates within a temperature range of -55°C to +150°C. Key electrical characteristics include a gate-source voltage limit of ±20 V and avalanche energy rating of 1500 mJ.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robust operation under transient stress conditions
- Single N-channel configuration with built-in body diode
- Flange mount design for efficient thermal dissipation
Single FETs, MOSFETs Applications
- High-voltage switching power supplies
- Industrial motor control systems
- Inverter circuits requiring high blocking voltage
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'Q' against official datasheets to confirm compliance with RoHS directives and lead-free status. Ensure the TO-247AD package dimensions match your PCB footprint requirements. Confirm that the 1000V rating aligns with your circuit's peak voltage stresses before procurement.
Single FETs, MOSFETs Selection Notes
Select this component when high voltage isolation is required alongside moderate current handling capabilities. The TO-247AD package facilitates direct mounting to heatsinks for improved thermal management. Consider the 0.75 Ω on-resistance for conduction loss calculations in low-frequency switching applications.
Single FETs, MOSFETs Part Context
This part belongs to the IXYS HiperFET Polar family, designed for general-purpose high-voltage switching. It utilizes standard silicon technology optimized for reliability in industrial environments. The TO-247AD form factor provides a balance between current capacity and physical size for through-hole implementations.
Single FETs, MOSFETs Replacement Considerations
Check for direct pin-compatible alternatives within the same voltage class. Verify that any substitute maintains the 1000V breakdown voltage and similar thermal resistance characteristics. Ensure the replacement supports the required 14 A continuous current rating.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
