IXFH150N15P

$10.52

Description：MOSFET N-CH 150V 150A TO247AD
Series：HiPerFET™, Polar
Mfr：Littelfuse Inc.
Package：Tube

SKU:c803fbfeca1b Category: Single FETs, MOSFETs Brand: Littelfuse Inc.

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Product introduction

IXFH150N15P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 150V 150A TO247AD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFH150N15P

Description：MOSFET N-CH 150V 150A TO247AD
Series：HiPerFET™, Polar
Mfr：Littelfuse Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：13mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs：190 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5800 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：714W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AD (IXFH)
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IXFH150N15P

IXFH150N15P

Single FETs, MOSFETs Overview

The IXFH150N15P is a single N-channel enhancement mode MOSFET from the HiPerFET family, manufactured by IXYS (Littelfuse). It utilizes silicon technology and is housed in a TO-247-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage of 150 V, a continuous drain current of 150 A, and a maximum on-resistance of 13 mΩ. The device supports gate-source voltages up to ±20 V with a typical threshold of 5 V. It features a gate charge of 190 nC, power dissipation of 714 W, and operates within a temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Integrates fast recovery rectifiers directly into the MOSFET architecture for improved switching efficiency.
Designed for hard switching applications requiring high thermal stability and low conduction losses.
Provides robust performance in high-power conversion systems with enhanced ruggedness.

Single FETs, MOSFETs Applications

Power factor correction circuits
High-efficiency DC-DC converters
Inverter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm pinout compatibility and exact electrical tolerances. Ensure the procurement channel provides original manufacturer documentation to validate authenticity. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling at moderate voltage levels. Evaluate thermal management strategies to accommodate the specified power dissipation rating. Confirm that the gate drive circuitry can support the required voltage limits and charge characteristics for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the IXFH150N15 series of N-channel HiPerFET MOSFETs. These devices are engineered for high-performance power electronics, combining low on-state resistance with fast switching capabilities. The series is widely used in industrial and commercial power supplies where efficiency and reliability are critical.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible alternatives within the same voltage and current ratings. Verify pinout and thermal characteristics match the existing design constraints before implementing any cross-references.