IXFH15N100

Single FETs, MOSFETs Overview

The IXFH15N100 is a single N-channel silicon power MOSFET from the HiPerFET family, housed in a TO-247AD package. It features a drain-source breakdown voltage of 1000V and a continuous drain current rating of 15A at 25°C. The device exhibits a maximum on-resistance of 1.2 ohms and an avalanche-rated capability. Key switching parameters include a gate charge of 38nC and a typical turn-on delay time of 26ns.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 1000V drain-source breakdown for robust operation in demanding environments
• Avalanche-rated construction to withstand energy stress during switching transitions
• Integrated body diode providing inherent freewheeling functionality within the single-channel configuration

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Motor control circuits requiring high blocking voltage
• Induction heating systems

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer date code and lot traceability upon receipt to ensure component authenticity. Confirm that the TO-247AD lead form matches the target PCB footprint requirements. Inspect the package for physical damage before soldering to prevent thermal or electrical failures during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a 1000V rating is mandatory and low conduction loss is secondary to reliability. The 1.2 ohm on-resistance dictates specific thermal management strategies compared to lower-voltage alternatives. Ensure the gate drive circuitry can handle the required charge levels efficiently.

Single FETs, MOSFETs Part Context

This part belongs to the HiPerFET series, designed for high-efficiency power conversion. It utilizes advanced planar trench technology to optimize the trade-off between blocking voltage and on-state resistance. The TO-247AD package provides a reliable mechanical interface for through-hole mounting in industrial applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 1000V rating, 15A current capacity, and TO-247AD package. Verify that alternative devices maintain comparable avalanche energy ratings and gate charge specifications to preserve original circuit timing and thermal performance.