Single FETs, MOSFETs IXFH18N60P product image

IXFH18N60P

$5.58
  • Description:MOSFET N-CH 600V 18A TO247AD
  • Series:HiPerFET™, Polar
  • Mfr:Littelfuse Inc.
  • Package:Tube

SKU:fa7dedaed910 Category: Brand:

  
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IXFH18N60P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 600V 18A TO247AD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFH18N60P

  • Description:MOSFET N-CH 600V 18A TO247AD
  • Series:HiPerFET™, Polar
  • Mfr:Littelfuse Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:400mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):360W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247AD (IXFH)
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for IXFH18N60P

IXFH18N60P

Single FETs, MOSFETs Overview

The Littelfuse IXFH18N60P is an N-Channel Enhancement Mode MOSFET from the Polar HiPerFET series. It features a 600V drain-source voltage rating and an 18A continuous drain current at case temperature. The device is housed in a TO-247-3 package with a thermal resistance of 0.52°C/W and dissipates up to 360W. Key electrical characteristics include low on-state resistance and gate charge, optimized for high-efficiency switching applications.

Single FETs, MOSFETs Feature Summary

  • Combines standard Polar family strengths with a faster body diode featuring reduced reverse recovery time
  • Rated for Unclamped Inductive Switching (UIS) and avalanche energy operations
  • Features low gate charge and low drain-to-tab capacitance for efficient switching
  • Utilizes international standard packages with low package inductance

Single FETs, MOSFETs Applications

  • Phase-shifted bridge motor control circuits
  • Uninterruptible power supply (UPS) systems
  • High-frequency switching power converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'P' indicates the correct package variant during procurement. Confirm that the component matches the official Littelfuse or IXYS datasheet specifications for the IXFH18N60P part number. Ensure compatibility with your circuit's thermal management requirements given the TO-247-3 form factor.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust avalanche capability and fast body diode recovery. The TO-247-3 package is suitable for through-hole mounting in industrial and power electronics designs. Consider the 600V rating for medium-voltage AC/DC conversion tasks where UIS reliability is critical.

Single FETs, MOSFETs Part Context

This device belongs to the Polar HiPerFET series by Littelfuse, which integrates improved body diode performance with established N-channel MOSFET reliability. The series targets applications demanding high switching speeds and ruggedness under inductive load conditions, bridging the gap between standard and advanced power semiconductor solutions.

Single FETs, MOSFETs Replacement Considerations

Check for equivalents within the IXYS Polar series such as the IXFH22N60P for higher current variants. Verify pinout compatibility and thermal characteristics before substituting with other manufacturers' 600V TO-247 MOSFETs.

IXFH18N60PIXFH18N60P
$5.58
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