Single FETs, MOSFETs IXFH40N50Q product image

IXFH40N50Q

$17.89
  • Description:MOSFET N-CH 500V 40A TO247AD
  • Series:HiPerFET™, Q Class
  • Mfr:Littelfuse Inc.
  • Package:Tube

SKU:b8d2dce8e36f Category: Brand:

  
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IXFH40N50Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 500V 40A TO247AD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFH40N50Q

  • Description:MOSFET N-CH 500V 40A TO247AD
  • Series:HiPerFET™, Q Class
  • Mfr:Littelfuse Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:140mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:3800 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):500W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247AD (IXFH)
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for IXFH40N50Q

IXFH40N50Q

Single FETs, MOSFETs Overview

The Littelfuse IXFH40N50Q is an N-Channel Enhancement Mode Power MOSFET from the HiPerFET Q-Class series. It features a 500V drain-source voltage rating and a continuous drain current of 40A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.14Ω at VGS=10V. Key electrical parameters include a gate charge of 130nC, turn-on delay of 17ns, and reverse recovery time of 250ns for the integrated source-drain diode. Thermal resistance junction-to-case is specified at 0.25 K/W.

Single FETs, MOSFETs Feature Summary

  • Advanced low gate charge process designed for faster switching speeds and easier driver requirements
  • Rated for unclamped inductive load (UIS) switching to handle avalanche energy events
  • Molding epoxies meet UL 94 V-0 flammability classification for safety compliance

Single FETs, MOSFETs Applications

  • High power density motor control systems
  • Industrial power supply designs
  • Unclamped inductive load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the datasheet covers both TO-247 AD (IXFH) and TO-268 (IXFT) outlines. Confirm that the component meets the necessary thermal management specifications for the intended operating temperature range of -55°C to +150°C. Ensure the gate drive circuitry supports the specified transient voltage limits.

Single FETs, MOSFETs Selection Notes

Select this component when high dv/dt capability and low gate charge are critical for efficiency. The UIS rating makes it suitable for inductive loads without external snubbers. Compare the 0.14Ω RDS(on) against alternative packages to determine the optimal thermal solution for the specific current requirements.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiPerFET Q-Class family, now distributed by Littelfuse. The series utilizes advanced processes to minimize gate charge while maintaining robust avalanche performance. The 'Q' suffix denotes the specific generation optimized for low capacitance and fast switching characteristics compared to standard MOSFETs.

Single FETs, MOSFETs Replacement Considerations

The IXFT40N50Q serves as the pin-compatible alternative in the TO-268 package. Verify that any substitute maintains the 500V rating and comparable RDS(on) values to ensure circuit compatibility.

IXFH40N50QIXFH40N50Q
$17.89
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