IXFH80N06

$5.75

Description：MOSFET N-CH 60V 80A TO247AD
Series：-
Mfr：IXYS
Package：Tube

SKU:94169789f898 Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXFH80N06 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 60V 80A TO247AD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFH80N06

Description：MOSFET N-CH 60V 80A TO247AD
Series：-
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AD (IXFH)
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IXFH80N06

IXFH80N06

Single FETs, MOSFETs Overview

The IXFH80N06 is an N-channel enhancement mode MOSFET from the IXYS HiPerFET series, housed in a TO-247-3 through-hole package. It features a drain-source breakdown voltage (Vds) of 60 V and supports a continuous drain current (Id) of 80 A at 25°C. The device exhibits a maximum on-state resistance (Rds(on)) of 4.5 mΩ at a gate-source voltage of 10 V. Key switching parameters include a total gate charge (Qg) of 190 nC and typical rise/fall times of 25 ns and 20 ns, respectively. It operates within a junction temperature range of -55°C to +175°C with a power dissipation rating of 330 W.

Single FETs, MOSFETs Feature Summary

Utilizes HiPerFET technology for optimized low on-resistance and fast switching performance.
Designed for high-current applications with robust avalanche energy capability.
Features a standard TO-247-3 leaded package suitable for through-hole mounting.

Single FETs, MOSFETs Applications

DC-DC converters
Motor control circuits
Power factor correction (PFC) stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix or revision code against the manufacturer's latest datasheet to ensure compatibility with your design requirements. Confirm RoHS compliance status and packaging type (tube vs. tape/reel) directly with authorized distributors. Cross-reference the part number with official component databases to avoid counterfeit risks and ensure traceability.

Single FETs, MOSFETs Selection Notes

Select this component when designing low-voltage, high-current power stages requiring efficient thermal management via through-hole mounting. Ensure the gate drive circuit can supply sufficient current to manage the 190 nC gate charge effectively. Verify that the PCB layout accommodates the TO-247-3 footprint and provides adequate copper area for heat dissipation to maintain junction temperatures within safe operating limits.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiPerFET family, known for high-performance silicon MOSFETs. It serves as a general-purpose power switch for industrial and consumer electronics. The TO-247-3 package provides a balance between electrical performance and mechanical robustness, making it suitable for applications where reliability under high stress is critical.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives from IXYS or other manufacturers offering similar Rds(on) and Id ratings in the TO-247-3 package. Ensure replacement parts match the 60V Vds and 80A Id specifications. Verify that switching characteristics and thermal resistance values are comparable to maintain system performance.