IXFK420N10T

Single FETs, MOSFETs Overview

The IXFK420N10T is a N-Channel enhancement mode Power MOSFET from the HiPerFET family, manufactured by Littelfuse (formerly IXYS). It features a TO-264 package with a drain tab. Key electrical parameters include a drain-source breakdown voltage of 100 V and a continuous drain current capability of 420 A at 25°C case temperature. The device exhibits a maximum on-resistance of 2.6 mΩ at VGS = 10V and ID = 60A. It supports a junction temperature range from -55°C to +175°C and has a power dissipation rating of 1670 W at 25°C.

Single FETs, MOSFETs Feature Summary

• High current handling capability for demanding power applications
• Fast intrinsic body diode with low reverse recovery time
• Rated for avalanche energy operation
• Low on-state resistance for improved efficiency

Single FETs, MOSFETs Applications

• Synchronous rectification
• DC-DC converters
• Battery chargers
• Switch-mode and resonant-mode power supplies
• Uninterruptible power supplies

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Littelfuse or IXYS when sourcing this component, as historical branding may vary. Confirm the specific package type required, as the datasheet indicates both TO-264 (IXFK) and PLUS247 (IXFX) variants exist within the same part number series. Ensure thermal management solutions align with the specified thermal resistance values provided in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component for high-current switching applications requiring low conduction losses. Consider the external lead current limit of 160 A RMS when designing PCB traces, distinct from the chip's 420 A capability. Evaluate gate drive requirements against the total gate charge of 670 nC to ensure adequate switching speed. Verify that the operating junction temperature remains within the -55°C to +175°C range during all operational modes.

Single FETs, MOSFETs Part Context

This device belongs to the HiPerFET family of trench gate power MOSFETs designed for high-efficiency power conversion. It utilizes advanced silicon technology to achieve low on-resistance while maintaining robust avalanche ruggedness. The TO-264 package provides a large thermal footprint for effective heat dissipation in through-hole mounting configurations.

Single FETs, MOSFETs Replacement Considerations

The IXFX420N10T is documented as a variant within the same series, utilizing the PLUS247 package instead of the TO-264 form factor. Electrical characteristics remain consistent between these package options.