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IXFK90N30 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 300V 90A TO-264. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXFK90N30
- Description：MOSFET N-CH 300V 90A TO-264
- Series：HiPerFET™
- Mfr：IXYS
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：300 V
- Current - Continuous Drain (Id) @ 25°C：90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：33mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id：4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs：360 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：10000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：560W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-264AA (IXFK)
- Package / Case：TO-264-3, TO-264AA
Single FETs, MOSFETs datasheet and documents for IXFK90N30
Single FETs, MOSFETs Overview
The IXFK90N30 is a single N-channel silicon power MOSFET from the IXYS HyperFET series, housed in a TO-247-3 through-hole package. It features a drain-source breakdown voltage of 300 V and a continuous drain current of 90 A at 25°C. The device exhibits a maximum on-resistance of 33 mΩ and a gate charge of 360 nC. Rated for a power dissipation of 560 W, it operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Utilizes IXYS HyperFET technology for optimized switching performance
- Designed for high-current applications with low conduction losses
- Robust thermal management capabilities via through-hole mounting
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converters
- Motor control systems
- Power supply inverters
Single FETs, MOSFETs Procurement Notes
Verify component authenticity against manufacturer specifications before integration. Confirm that the specific revision matches the required electrical parameters. Ensure proper handling procedures are followed due to electrostatic sensitivity. Cross-reference datasheet values with actual test conditions to validate performance expectations in the final circuit design.
Single FETs, MOSFETs Selection Notes
Select this component when a 300V rating and 90A current capacity are required in a standard TO-247 footprint. Consider the 33 mΩ on-resistance for efficiency calculations. Evaluate thermal resistance requirements based on the 560W dissipation rating. Compare gate charge characteristics against driver capabilities to ensure adequate switching speeds.
Single FETs, MOSFETs Part Context
This part belongs to the IXYS HyperFET family, which focuses on balancing low on-resistance with fast switching times. The TO-247-3 package provides a reliable mechanical interface for high-power industrial applications. It serves as a discrete solution for medium-voltage power conversion tasks requiring robust performance.
Single FETs, MOSFETs Replacement Considerations
Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains or improves upon the 33 mΩ on-resistance and 360 nC gate charge specifications. Ensure the replacement package matches the TO-247-3 form factor for board compatibility.
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