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IXFL30N120P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 1200V 18A I5PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXFL30N120P
- Description：MOSFET N-CH 1200V 18A I5PAK
- Series：HiPerFET™, Polar
- Mfr：IXYS
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：310 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：19000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ISOPLUSi5-Pak™
- Package / Case：ISOPLUSi5-PAK™
Single FETs, MOSFETs datasheet and documents for IXFL30N120P
Single FETs, MOSFETs Overview
The IXFL30N120P is an N-channel enhancement mode power MOSFET from the Polar HiPerFET series. It features a 1200V drain-source breakdown voltage and a continuous drain current of 18A at case temperature. The device utilizes ISOPLUSi5-Pak through-hole packaging, rated for 357W power dissipation. Key electrical parameters include a maximum on-resistance of 640mΩ and a gate threshold voltage ranging from 3V to 5V. It operates within a junction temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 1200V drain-source rating
- Optimized low on-resistance for reduced conduction losses
- Robust thermal performance in ISOPLUSi5-Pak package
- Enhanced switching characteristics for high-frequency applications
Single FETs, MOSFETs Applications
- Industrial motor drives
- Switch-mode power supplies
- Inverter circuits
- Uninterruptible power systems
Single FETs, MOSFETs Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches ISOPLUSi5-Pak requirements. Ensure storage conditions comply with moisture sensitivity levels. Validate that the specific batch meets RoHS compliance standards required for your region. Cross-reference ordering information directly with authorized distributors to avoid counterfeit parts.
Single FETs, MOSFETs Selection Notes
Select this component when high blocking voltage and moderate current capacity are required in a through-hole configuration. Consider the 640mΩ on-resistance for efficiency calculations in power conversion stages. Evaluate thermal management needs based on the 357W package rating under specified case temperatures. Compare switching speeds against circuit requirements to ensure compatibility with drive signals.
Single FETs, MOSFETs Part Context
This part belongs to IXYS' Polar HiPerFET family, designed for high-efficiency power switching. The series emphasizes low on-resistance and fast switching capabilities. It targets industrial and commercial power electronics where reliability and thermal stability are critical. The through-hole format supports robust mechanical mounting in heavy-duty equipment.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the same voltage and current class. Verify pinout compatibility before substitution. Ensure replacement devices meet or exceed the original on-resistance and thermal specifications. Confirm package dimensions match existing PCB footprints.
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