Single FETs, MOSFETs IXFM67N10 product image

IXFM67N10

  • Description:MOSFET N-CH 100V 67A TO204AE
  • Series:HiPerFET™
  • Mfr:IXYS
  • Package:Tube

SKU:2a64fe9178ce Category: Brand:

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IXFM67N10 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 100V 67A TO204AE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFM67N10

  • Description:MOSFET N-CH 100V 67A TO204AE
  • Series:HiPerFET™
  • Mfr:IXYS
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:25mOhm @ 33.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs:260 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):300W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-204AE
  • Package / Case:TO-204AE

Single FETs, MOSFETs datasheet and documents for IXFM67N10

IXFM67N10

Single FETs, MOSFETs Overview

The IXYS IXFM67N10 is a single N-channel enhancement-mode Power MOSFET belonging to the HiPerFET series. It features a TO-204AE (TO-3) through-hole package designed for robust thermal management. The device supports a maximum drain-source voltage of 100 V and a continuous drain current of 67 A. Key electrical characteristics include a low on-state resistance of 5.4 mΩ, ensuring efficient power conduction. It operates within a junction temperature range of -55°C to +175°C and offers a typical gate charge of 152 nC.

Single FETs, MOSFETs Feature Summary

  • High-current capability with 67 A continuous drain current rating
  • Low on-state resistance for minimized conduction losses
  • Wide operating temperature range up to 175°C
  • Robust TO-3 package construction for high-power applications

Single FETs, MOSFETs Applications

  • DC-DC converters
  • Motor control circuits
  • Power supply inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer suffix and date code upon ordering, as Littelfuse acquired IXYS. Confirm RoHS compliance status directly with the supplier or datasheet revision. Ensure the TO-3 package dimensions match your PCB footprint requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling in a traditional TO-3 package is required. Compare its 5.4 mΩ Rds(on) against alternatives if lower switching losses are critical. Consider the thermal resistance of the TO-3 case for heatsinking design. Verify that the 100 V rating aligns with your system's peak voltage stresses.

Single FETs, MOSFETs Part Context

This part belongs to the HiPerFET family, known for optimized performance in power switching applications. IXYS was acquired by Littelfuse, which continues to manufacture these devices under the new corporate structure. The TO-3 package remains a standard form factor for high-power discrete semiconductors requiring direct mounting to heat sinks.

Single FETs, MOSFETs Replacement Considerations

Check for exact pin-compatible replacements from Littelfuse or other manufacturers offering similar TO-3 packages. Ensure substitute parts meet the 67 A current and 100 V voltage ratings. Verify thermal resistance values to maintain equivalent cooling performance.

IXFM67N10IXFM67N10

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