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IXFM67N10 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 100V 67A TO204AE. Review the specifications below when checking this part for your BOM.
The IXYS IXFM67N10 is a single N-channel enhancement-mode Power MOSFET belonging to the HiPerFET series. It features a TO-204AE (TO-3) through-hole package designed for robust thermal management. The device supports a maximum drain-source voltage of 100 V and a continuous drain current of 67 A. Key electrical characteristics include a low on-state resistance of 5.4 mΩ, ensuring efficient power conduction. It operates within a junction temperature range of -55°C to +175°C and offers a typical gate charge of 152 nC.
Verify the specific manufacturer suffix and date code upon ordering, as Littelfuse acquired IXYS. Confirm RoHS compliance status directly with the supplier or datasheet revision. Ensure the TO-3 package dimensions match your PCB footprint requirements before finalizing procurement.
Select this component when high current handling in a traditional TO-3 package is required. Compare its 5.4 mΩ Rds(on) against alternatives if lower switching losses are critical. Consider the thermal resistance of the TO-3 case for heatsinking design. Verify that the 100 V rating aligns with your system's peak voltage stresses.
This part belongs to the HiPerFET family, known for optimized performance in power switching applications. IXYS was acquired by Littelfuse, which continues to manufacture these devices under the new corporate structure. The TO-3 package remains a standard form factor for high-power discrete semiconductors requiring direct mounting to heat sinks.
Check for exact pin-compatible replacements from Littelfuse or other manufacturers offering similar TO-3 packages. Ensure substitute parts meet the 67 A current and 100 V voltage ratings. Verify thermal resistance values to maintain equivalent cooling performance.
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