IXFP20N50P3M

Single FETs, MOSFETs Overview

The IXFP20N50P3M is a single N-Channel Power MOSFET from the HiPerFET family, manufactured by IXYS. It features a TO-220-3 through-hole package with an overmolded case for enhanced thermal and mechanical stability. The device supports a drain-source voltage (Vds) of 500 V and a continuous drain current (Id) of 8 A at case temperature. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±30 V, a typical on-resistance (Rds(on)) of 1.4 Ohms, and a gate charge (Qg) of 26 nC. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 58 W.

Single FETs, MOSFETs Feature Summary

• HiPerFET technology optimized for high-voltage switching applications
• Overmolded TO-220-3 package provides robust mechanical protection and improved heat dissipation
• Enhancement mode operation with low gate charge for efficient drive requirements

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Motor control circuits
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'M' indicates the overmolded variant when sourcing. Confirm RoHS compliance status via the manufacturer's latest documentation. Ensure the supplier provides official datasheets matching the IXFP20N50P3M designation to avoid confusion with non-overmolded versions or other series members.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring reliable high-voltage switching in compact through-hole layouts. The overmolded construction offers superior durability compared to standard plastic packages. Evaluate thermal management needs based on the 58 W dissipation limit and ensure gate drive voltages remain within the ±30 V specification.

Single FETs, MOSFETs Part Context

This part belongs to IXYS's HiPerFET line, designed for high-performance power switching. It complements other 500 V N-Channel MOSFETs like the IXTQ series but distinguishes itself with the TO-220-3 overmolded form factor. The Polar3 technology integrates fast body diode characteristics suitable for hard-switching topologies.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other IXYS HiPerFET devices in TO-220-3 packages with similar 500 V ratings. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference with generic 500 V N-Channel MOSFETs only if electrical parameters and package dimensions are strictly matched.