IXFP8N50P3

Single FETs, MOSFETs Overview

The IXFP8N50P3 is an N-channel enhancement mode Power MOSFET from the IXYS Polar3 series. It features a 500 V drain-source voltage rating and an 8 A continuous drain current capability. The device utilizes silicon technology in a TO-220AB through-hole package with three pins. Key electrical parameters include a maximum on-resistance of 800 mΩ, a gate threshold voltage of 5 V, and a total gate charge of 13 nC at 10 V. It operates within a temperature range of -55 °C to +150 °C with a power dissipation of 180 W.

Single FETs, MOSFETs Feature Summary

• High-voltage N-channel construction for robust switching performance
• Enhancement mode operation with low gate charge characteristics
• Avalanche-rated design for improved ruggedness
• Single configuration with built-in body diode

Single FETs, MOSFETs Applications

• Communication power supply systems
• Industrial motor drive circuits
• Medical equipment power stages
• Automotive electronic control units

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer lot code and date code upon receipt to ensure component authenticity. Confirm that the physical package matches the TO-220AB specification and that pin configurations align with standard mounting requirements. Check for any RoHS compliance documentation if environmental regulations apply to the final assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V blocking capability is required alongside moderate current handling up to 8 A. The TO-220AB package facilitates efficient heat dissipation for through-hole mounting applications. Consider the 800 mΩ on-resistance for conduction loss calculations and the 13 nC gate charge for driver selection in switching frequency designs.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS Polar3 family of high-voltage power MOSFETs. The series is characterized by optimized cell architecture for reduced on-state resistance and fast switching speeds. These devices are engineered for general-purpose power switching applications requiring reliable performance under high voltage stress conditions.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 500 V rating, N-channel type, and TO-220AB package. Verify that alternative components meet or exceed the 8 A current rating and 800 mΩ on-resistance specifications to maintain circuit performance integrity.