IXFR30N110P

Single FETs, MOSFETs Overview

The IXFR30N110P is an N-channel enhancement mode Power MOSFET from the HiPerFET Polar series, designed for high-voltage applications. It features a 1100 V drain-source voltage rating and supports a continuous drain current of 16 A at case temperature. The device utilizes ISOPLUS247 through-hole packaging to facilitate thermal management. Key electrical characteristics include a maximum on-resistance of 560 mΩ and a typical gate charge of 38 nC. It operates within a junction temperature range of -55°C to +150°C with a power dissipation capacity of 320 W.

Single FETs, MOSFETs Feature Summary

• HiPerFET Polar technology optimized for low switching losses
• ISOPLUS247 package providing robust mechanical stability and thermal performance
• High breakdown voltage capability suitable for demanding power circuits

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Industrial motor control systems
• Uninterruptible power supply (UPS) inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with your design requirements. Confirm that the ISOPLUS247 footprint matches your PCB layout constraints. Check for any RoHS or REACH compliance documentation required for your region. Ensure thermal interface materials are selected appropriately for the specified power dissipation limits.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation and efficient switching are required in through-hole designs. Compare the 560 mΩ on-resistance against alternative packages to evaluate conduction losses. Consider the 38 nC gate charge for driver selection and switching frequency optimization. Evaluate the thermal resistance of the ISOPLUS247 package relative to your heat sinking strategy.

Single FETs, MOSFETs Part Context

This part belongs to IXYS' HiPerFET Polar family, which integrates advanced trench gate technology for improved efficiency. The ISOPLUS247 package is distinct from standard TO-247 variants, offering enhanced mounting options and thermal conductivity. It serves as a discrete solution for medium-power applications where reliability under high voltage stress is critical.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other HiPerFET Polar devices with similar voltage and current ratings. Verify pinout compatibility before substitution. Alternative packages like TO-247 may require adapter plates or redesign.