IXFR40N50Q2

Description：MOSFET N-CH 500V 29A ISOPLUS247
Series：HiPerFET™
Mfr：IXYS
Package：Tube

SKU:35d60e44945f Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXFR40N50Q2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 500V 29A ISOPLUS247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFR40N50Q2

Description：MOSFET N-CH 500V 29A ISOPLUS247
Series：HiPerFET™
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：170mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：4200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：320W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：ISOPLUS247™
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IXFR40N50Q2

IXFR40N50Q2

Single FETs, MOSFETs Overview

The IXYS IXFR40N50Q2 is an N-Channel Enhancement Mode Power MOSFET from the HiPerFET series, housed in an ISOPLUS247 (TO-264) package. It features a drain-source voltage rating of 500 V and a continuous drain current of 29 A at 25°C case temperature. The device has a maximum on-state resistance of 0.17 Ω and supports a repetitive pulsed drain current of 160 A. Key electrical parameters include a gate charge of 110 nC, a threshold voltage range of 2.5 to 5.0 V, and a reverse recovery time of 250 ns for its intrinsic body diode. Thermal characteristics specify a junction-to-case thermal resistance of 0.39 K/W.

Single FETs, MOSFETs Feature Summary

Double metal process architecture designed to achieve low gate resistance and high dv/dt capability.
Avalanche energy rated with specific limits for avalanche current and single pulse energy.
Fast intrinsic rectifier characterized by low reverse recovery time and charge.
Epoxy compound meets UL 94 V-0 flammability classification.

Single FETs, MOSFETs Applications

DC-DC converters
Switched-mode and resonant-mode power supplies operating above 500 kHz
DC choppers
Pulse generation circuits
Laser drivers

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision status and test conditions match design requirements. Ensure proper handling procedures are followed due to electrostatic sensitivity. Cross-reference ordering suffixes if variations exist within the same base part number family.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring 500 V blocking capability and moderate current handling up to 29 A. Evaluate thermal management needs based on the specified junction-to-case thermal resistance. Consider the low gate charge for driving efficiency in high-frequency applications exceeding 500 kHz. Verify that the avalanche rating aligns with potential transient energy events in the target circuit topology.

Single FETs, MOSFETs Part Context

This device belongs to the IXYS HiPerFET family of power MOSFETs, which utilize advanced silicon planar technology. The ISOPLUS247 package provides a standardized footprint for high-power density designs. The Q2 suffix typically denotes specific manufacturing lot or testing variations within the standard product line, though functional parameters remain consistent with the base model specifications.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 500 V rating, TO-264/ISOPLUS247 package, and similar Rds(on) and Qg values. Verify pinout compatibility and thermal resistance characteristics before substitution.