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IXFT32N50 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 500V 32A TO268. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXFT32N50
- Description：MOSFET N-CH 500V 32A TO268
- Series：HiPerFET™
- Mfr：IXYS
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs：300 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5700 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-268AA
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Single FETs, MOSFETs datasheet and documents for IXFT32N50
Single FETs, MOSFETs Overview
The IXFT32N50 is a HiPerFET Q-Class N-Channel Enhancement Mode Power MOSFET manufactured by IXYS. It features an avalanche-rated design with low gate charge and capacitances for easier driving and faster switching. The device utilizes advanced silicon processes to achieve low on-resistance while maintaining high power density in international standard packages.
Single FETs, MOSFETs Feature Summary
- Avalanche rated capability for robust operation under unclamped inductive switching conditions
- Low gate charge and capacitances facilitate easier driver requirements and faster switching speeds
- Advanced process technology ensures low on-resistance for improved efficiency
Single FETs, MOSFETs Applications
- High frequency power conversion circuits
- Unclamped inductive load switching applications
- Space-constrained high power density designs
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix designation, such as Q, against official datasheets to confirm exact electrical characteristics and package variations. Ensure component authenticity through authorized channels and validate RoHS compliance status prior to integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component when low gate charge and fast switching are critical for system efficiency. The avalanche rating makes it suitable for inductive loads where voltage spikes occur. Compare on-resistance values against thermal constraints to ensure adequate heat dissipation within the TO-247 package limits.
Single FETs, MOSFETs Part Context
This part belongs to the HiPerFET Q-Class series of N-Channel Power MOSFETs from IXYS. The series emphasizes low gate charge and low on-resistance for high-frequency applications. It shares architectural similarities with other Q-Class devices designed for efficient power management.
Single FETs, MOSFETs Replacement Considerations
Check equivalent parts like IXFH32N50 or IXFT32N50Q for pin compatibility and parameter alignment. Verify that substitute components meet the same avalanche energy ratings and thermal performance specifications required by the original design.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
