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IXFT60N25Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 250V 60A TO268. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXFT60N25Q
- Description：MOSFET N-CH 250V 60A TO268
- Series：HiPerFET™
- Mfr：IXYS
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：47mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs：180 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5100 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-268AA
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Single FETs, MOSFETs datasheet and documents for IXFT60N25Q
Single FETs, MOSFETs Overview
The IXFT60N25Q is an N-Channel Power MOSFET manufactured by IXYS. It features a 600V drain-source breakdown voltage and a continuous drain current of 48A. The device has a maximum on-resistance of 140 milliohms and operates with a gate-source voltage up to 30V. It utilizes a TO-247 package for through-hole mounting and offers a power dissipation rating of 1kW.
Single FETs, MOSFETs Feature Summary
- High current handling capability
- Low on-resistance design
- Fast intrinsic rectifier
Single FETs, MOSFETs Applications
- DC-DC Converters
- Battery Chargers
- Switch-Mode Power Supplies
- AC Motor Drives
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official datasheets, as variations may exist. Confirm RoHS compliance status and exact thermal characteristics before integration. Ensure the supplier provides genuine components from authorized channels to guarantee performance reliability in high-power applications.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust avalanche ruggedness and efficient switching. Consider the TO-247 package for effective heat dissipation. Evaluate the trade-off between low on-resistance and gate charge requirements for optimal drive circuit compatibility.
Single FETs, MOSFETs Part Context
This part belongs to the IXYS Q3 Class HiPerFET series, designed for high-efficiency power conversion. It integrates fast recovery characteristics suitable for demanding industrial environments. The technology focuses on reducing conduction losses while maintaining high voltage blocking capabilities.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the same IXYS family or equivalent specifications from other manufacturers. Verify pinout compatibility and thermal resistance values when considering alternative sources.
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