IXFT60N65X2HV

Single FETs, MOSFETs Overview

The IXFT60N65X2HV is a single N-channel enhancement-mode Power MOSFET from the HiPerFET family, utilizing silicon technology. It features a 650 V drain-source voltage rating and supports a continuous drain current of 60 A. The device offers a maximum on-resistance of 52 mΩ and handles up to 780 W of power dissipation. Key electrical parameters include a gate charge of 108 nC at specified conditions, a threshold voltage of 3.5 V, and switching times with a rise time of 23 ns and fall time of 12 ns. It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes Ultra Junction X2 technology for optimized performance characteristics.
• Designed for high-efficiency switching applications with low conduction losses.
• Features robust thermal management capabilities suitable for demanding environments.

Single FETs, MOSFETs Applications

• High-frequency power supplies
• Motor control systems
• Industrial inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix HV against official datasheets to confirm pinout and isolation requirements. Ensure compatibility with existing PCB footprints for the D3PAK-3 package. Cross-reference thermal resistance values with system heat sink designs. Confirm moisture sensitivity levels for storage and reflow soldering processes. Validate that all electrical ratings align with the target application's peak stress conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 650 V rating and 60 A current capacity are required in a surface-mount format. Compare the 52 mΩ on-resistance against alternative packages to balance conduction losses with thermal constraints. Evaluate the 108 nC gate charge against driver capability to ensure efficient switching speeds. Consider the D3PAK-3 footprint availability during layout design. Assess the 780 W power dissipation limit relative to the expected ambient operating temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the HiPerFET series, which focuses on high-performance power switching solutions. The X2 designation indicates the use of advanced trench technology to reduce on-resistance. As an N-channel device, it is commonly used in low-side switching configurations or half-bridge arrangements within power electronics circuits.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 650 V, 60 A N-channel MOSFETs in the D3PAK-3 package with similar Rds(on) and Qg specifications. Verify pin compatibility before substitution. Check if alternative parts meet the same thermal and voltage derating requirements.