IXFX120N30P3

Single FETs, MOSFETs Overview

The Littelfuse IXFX120N30P3 is a Polar3 Series N-Channel HiPerFET MOSFET designed for high-efficiency power switching. It features a drain-source voltage (Vdss) of 300V and a continuous drain current (Id) of 120A at case temperature. The device exhibits a typical on-resistance (RDS(on)) of 27mΩ and a maximum power dissipation (Pd) of 1.13kW. This component utilizes advanced Super Junction technology to achieve low gate charge and fast switching speeds, making it suitable for demanding industrial and consumer applications.

Single FETs, MOSFETs Feature Summary

• Utilizes Polar3™ HiPerFET technology with Super Junction structure for superior figure of merit compared to conventional planar technologies.
• Features ultra-low on-resistance and reduced gate charge to minimize conduction and switching losses.
• Incorporates a fast body diode with high dv/dt ruggedness for reliable operation in hard-switching environments.
• Designed with low package inductance to support high-frequency switching applications.

Single FETs, MOSFETs Applications

• High-efficiency switch-mode power supplies
• Industrial motor drives and inverters
• Uninterruptible power supply (UPS) systems
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'P3' against official Littelfuse documentation to confirm the Polar3 series designation and associated electrical characteristics. Ensure the ordering part number matches the required package type and thermal specifications. Cross-reference datasheet parameters such as RDS(on) and Qg with the latest manufacturer release notes to avoid discrepancies from older revisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 300V rating is required alongside high current handling capabilities up to 120A. The Polar3 technology offers improved efficiency over standard MOSFETs due to lower gate charge and on-resistance. Consider the thermal management requirements given the 1.13kW power dissipation rating and ensure the application benefits from the fast body diode characteristics for inductive load switching.

Single FETs, MOSFETs Part Context

This device belongs to the Littelfuse Polar3 Series of N-Channel HiPerFETs. It represents an evolution in Super Junction MOSFET technology, offering approximately 12% lower on-resistance and 14% lower gate charge compared to previous generations. The series is engineered to replace weaker super-junction technologies in high-performance power conversion designs.

Single FETs, MOSFETs Replacement Considerations

Direct replacements within the same Polar3 family include variants with different current ratings or resistance values, such as the IXFH or IXFT series counterparts if pin compatibility is maintained. Verify that any substitute maintains the 300V Vdss rating and compatible package dimensions for direct board integration.