IXFY30N25X3

Single FETs, MOSFETs Overview

The IXFY30N25X3 is a single N-channel enhancement mode MOSFET from the HiPerFET series, manufactured by Littelfuse Inc. It utilizes silicon technology and is housed in a TO-252-3 surface-mount package. The device features a drain-source breakdown voltage of 250 V and supports a continuous drain current of 30 A at case temperature. Its maximum on-resistance is specified at 60 mOhms. The gate threshold voltage is 2.5 V, with a total gate charge of 21 nC. Power dissipation reaches 170 W, and it operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• HiPerFET X3CLASS technology for optimized performance
• Avalanche rated capability for robust operation
• Surface-mount design for automated assembly

Single FETs, MOSFETs Applications

• High-frequency power switching circuits
• DC-DC converter topologies
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Littelfuse Inc., reflecting the corporate acquisition of IXYS. Confirm the specific suffix 'X3' corresponds to the intended packaging and product class requirements. Ensure the component meets RoHS compliance standards relevant to the target market. Cross-reference the datasheet revision date to validate electrical parameter accuracy before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 250V rating and 30A continuous current capacity are required in a compact SMD form factor. The low gate charge facilitates efficient driver interface design. Evaluate thermal management needs against the 170W dissipation limit. Consider the TO-252-3 footprint compatibility during PCB layout planning to ensure adequate copper area for heat sinking.

Single FETs, MOSFETs Part Context

This part belongs to the HiPerFET family, representing high-performance silicon MOSFETs designed for demanding power electronics. The X3 classification denotes specific packaging and reliability attributes within the portfolio. It serves as a discrete solution for medium-power conversion tasks where size constraints favor surface-mount integration over through-hole alternatives.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other 250V, 30A N-channel MOSFETs in TO-252 packages. Verify pinout compatibility and thermal resistance values. Check if alternative manufacturers offer equivalent Rds(on) and Qg specifications. Ensure avalanche energy ratings match application stress levels.