IXG100IF1200HF

Overview

The IXG100IF1200HF is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) from the GENX4 series, manufactured by IXYS. It features a TO-247-PLUS-3 through-hole package designed for high-power applications. Key electrical specifications include a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 140 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 2.2 V.

Feature Summary

• Utilizes GENX4 technology for optimized switching performance
• Designed for high-voltage power switching applications
• Features robust thermal management via TO-247-PLUS-3 package

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• High-frequency power converters

Procurement Notes

Verify the specific suffix HF against the manufacturer's official datasheet to confirm pinout and thermal characteristics match your design requirements. Ensure the supplier provides original packaging documentation to guarantee component authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high voltage blocking capability combined with substantial current handling in a standard through-hole form factor. Consider the 1.2 kV rating and 140 A current capacity relative to your system's peak load demands and thermal dissipation constraints.

Part Context

This IGBT belongs to the IXYS GENX4 family, which integrates advanced trench gate technology. The series is engineered to deliver superior efficiency and switching speed compared to previous generations, making it suitable for demanding industrial and commercial power electronics environments.

Replacement Considerations

Consult official IXYS substitution guides for compatible alternatives. Verify that any substitute part matches the 1.2 kV voltage rating, 140 A current capacity, and TO-247-PLUS-3 package dimensions to ensure mechanical and electrical compatibility.