IXGA12N100

Overview

The IXGA12N100 is an IGBT with antiparallel FRED in one package. It utilizes the second generation HDMOSTM process for low VCE(sat) and minimum on-state conduction losses. The device features MOS Gate turn-on for drive simplicity and a Fast Recovery Expitaxial Diode (FRED) with soft recovery and low IRM. It is available in international standard packages JEDEC TO-220AB and TO-263AA.

Feature Summary

• IGBT with antiparallel FRED in one package
• Second generation HDMOSTM process
• Low VCE(sat) for minimum on-state conduction losses
• Fast Recovery Expitaxial Diode (FRED) with soft recovery

Applications

• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies

Procurement Notes

Verify the specific suffix (e.g., U1, A) against the datasheet to confirm package type (TO-220AB or TO-263AA) and electrical characteristics. Ensure the component matches the required voltage and current ratings for the target application. Confirm manufacturer authenticity through authorized channels.

Selection Notes

Select based on the need for combined IGBT and diode functionality in a single package to save space and reduce assembly time. Consider the low VCE(sat) for efficiency in high-power applications. Verify compatibility with existing gate drive circuits due to MOS gate characteristics.

Part Context

This component belongs to the IXYS Combi Pack series, integrating an IGBT and a FRED diode. It is designed for high power density applications. Similar parts include IXGA12N100A and other HiPerFAST IGBTs with diodes from IXYS Corporation.

Replacement Considerations

Check for direct substitutes like IXGA12N100A. Verify pinout compatibility and thermal performance. Ensure the replacement maintains the same package style and electrical specifications for seamless integration.