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Product Detailed Parameters
- Description：IGBT 600V 24A TO-263AA
- Series：HiPerFAST™, Lightspeed™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：24 A
- Current - Collector Pulsed (Icm)：48 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 12A
- Power - Max：100 W
- Switching Energy：90µJ (off)
- Input Type：Standard
- Gate Charge：32 nC
- Td (on/off) @ 25°C：20ns/60ns
- Test Condition：480V, 12A, 18Ohm, 15V
- Reverse Recovery Time (trr)：35 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
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Overview
The IXGA12N60CD1 is a GenX5 trench-gate Insulated Gate Bipolar Transistor manufactured by IXYS. It features a 600V breakdown voltage and a continuous collector current of 24A. The device utilizes XPT technology to achieve low saturation voltage, specified at 2.7V typical. It is housed in a D2PAK-3 (TO-263-3) surface-mount package. The component operates within a junction temperature range of -55°C to +150°C and includes a square Reverse Bias Safe Operating Area.
Feature Summary
- GenerX5 trench gate technology for optimized switching performance
- XPT substrate technology ensuring low conduction losses
- Square Reverse Bias Safe Operating Area for robust operation
Applications
- Switch-mode power supplies
- Motor control inverters
- High-frequency DC-DC converters
Procurement Notes
Verify the obsolete status before procurement as the manufacturer lists this part as Not Recommended for New Designs. Confirm availability through authorized distributors or secondary markets. Ensure the D2PAK-3 package matches the target PCB footprint. Validate that the 600V rating and 24A current capacity meet the specific circuit requirements.
Selection Notes
Select this component when a surface-mount IGBT with moderate current handling is required. The D2PAK-3 package offers thermal efficiency for compact designs. Consider the 2.7V saturation voltage for efficiency calculations. Compare against other GenX5 variants if different packaging or current ratings are needed. Ensure driver circuits support the gate charge characteristics typical of trench-gate devices.
Part Context
This device belongs to the IXYS GenX5 family of IGBTs, which combines trench gate technology with XPT substrate engineering. The family targets high-efficiency power conversion applications. The CD1 suffix typically denotes specific testing or binning criteria within the standard IXGA12N60B series, though functional parameters remain consistent with the base model specifications.
Replacement Considerations
The IXGA12N60B is the primary equivalent part number within the same series. Verify pinout compatibility between the D2PAK-3 packages. Check datasheet differences regarding specific electrical tolerances or thermal resistance values. Ensure any substitute maintains the 600V VCEO and 24A Ic ratings.
