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Product Detailed Parameters
- Description：IGBT PT 600V 40A TO-263AA
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 12A
- Power - Max：150 W
- Switching Energy：160µJ (on), 120µJ (off)
- Input Type：Standard
- Gate Charge：24 nC
- Td (on/off) @ 25°C：18ns/73ns
- Test Condition：400V, 12A, 22Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
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Overview
The IXGA16N60B2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a Punch-Through (PT) architecture designed for medium-speed switching applications operating between 5 kHz and 40 kHz. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 16 A at 25°C. It utilizes a TO-263AB surface-mount package, facilitating efficient thermal management in power electronics designs.
Feature Summary
- Utilizes Punch-Through technology to achieve low saturation voltage characteristics
- Engineered for medium-speed switching operations within the 5 kHz to 40 kHz frequency range
- Integrated short-circuit safe operating area capability for enhanced system robustness
Applications
- Motor drive inverters
- Switched-mode power supplies
- Induction heating systems
Procurement Notes
Verify component authenticity through authorized IXYS distributors or Littelfuse channels. Confirm manufacturing date codes and lot traceability against current supply chain requirements. Ensure storage conditions adhere to moisture sensitivity level specifications prior to soldering processes.
Selection Notes
Select this component for circuits requiring moderate current handling with low conduction losses. Evaluate thermal resistance parameters relative to the specific PCB copper area available for heat dissipation. Ensure gate drive voltage levels align with standard IGBT control signals to optimize switching performance.
Part Context
This part belongs to the IXYS GenX3 family of IGBTs, which combines fast recovery diodes with optimized transistor structures. The series targets industrial power conversion needs where efficiency and reliability are critical. It represents a mature technology platform widely used in established power electronic architectures.
Replacement Considerations
Direct pin-compatible substitutes may include other 600V PT IGBTs in TO-263 packages from IXYS or Littelfuse, such as the IXGH series. Verify that replacement devices match the required current ratings, saturation voltages, and switching speeds before implementation.
