IXGA20N120

Overview

The IXGA20N120B3-TRL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing silicon technology and the GenX3 trademark. It is housed in a D2PAK-3 (TO-263-3) surface-mount package designed for high-power applications. The device features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 80 A. At 25°C, it supports a continuous collector current of 36 A with a power dissipation rating of 180 W. The saturation voltage is specified at 2.7 V, while the gate-emitter leakage current remains at 100 nA. Operating temperatures range from -55°C to +150°C.

Feature Summary

• High-voltage capability with a 1.2 kV collector-emitter breakdown voltage suitable for demanding power switching environments.
• Robust thermal performance allowing operation up to a maximum junction temperature of +150°C.
• Surface-mount D2PAK-3 packaging facilitates automated assembly and efficient heat dissipation for compact designs.

Applications

• Industrial motor drives and inverters requiring high-voltage switching.
• Uninterruptible power supplies (UPS) and DC-DC converters.
• Welding equipment and induction heating systems.

Procurement Notes

Verify the specific suffix when ordering, as the provided data references the -TRL variant which indicates reel packaging. Confirm RoHS compliance status through official documentation prior to integration. Ensure that the procurement channel provides traceable source materials to guarantee component authenticity and adherence to specified electrical tolerances.

Selection Notes

Select this component for circuits requiring 1.2 kV blocking voltage and moderate current handling in a surface-mount form factor. Evaluate thermal management requirements carefully, as the 180 W power dissipation rating depends on adequate heatsinking. Compare saturation voltage characteristics against system efficiency targets to ensure optimal performance under load conditions.

Part Context

This IGBT belongs to the IXYS GenX3 family, which utilizes trench gate technology to optimize switching losses and conduction characteristics. The part number structure typically indicates voltage class and current rating, with the B3 suffix often denoting specific internal design iterations or packaging variations within the manufacturer's portfolio.

Replacement Considerations

Direct substitutes may include other 1.2 kV, TO-263 packaged IGBTs from manufacturers such as Infineon or Mitsubishi, provided pin compatibility and electrical parameters align. Verify that alternative devices meet or exceed the 1.2 kV VCEO and 80 A Ic ratings to maintain circuit integrity without redesign.