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Product Detailed Parameters
- Description：IGBT PT 1200V 40A TO-263AA
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：180 W
- Switching Energy：2.85mJ (on), 6.47mJ (off)
- Input Type：Standard
- Gate Charge：50 nC
- Td (on/off) @ 25°C：16ns/290ns
- Test Condition：960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
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Overview
The IXGA20N120A3 is a GenX3 technology insulated gate bipolar transistor (IGBT) manufactured by IXYS. It features a 1200V collector-emitter voltage rating and a continuous collector current of 20A. The device utilizes ultra-low saturation voltage planar trench technology, optimized for switching frequencies up to 3 kHz. Key electrical parameters include a maximum Vces of 1200V and an Ic of 20A at 25°C.
Feature Summary
- Utilizes GenX3 planar trench technology for enhanced performance
- Designed with ultra-low saturation voltage characteristics
- Optimized for medium-frequency switching applications
Applications
- Medium frequency power conversion systems
- Industrial motor drives
- High-efficiency inverter circuits
Procurement Notes
Verify the specific suffix 'A3' against official IXYS documentation to confirm pinout and thermal characteristics. Ensure the component matches the required 1200V rating and 20A current capacity for the target circuit design before procurement.
Selection Notes
Select this IGBT for applications requiring low conduction losses at moderate switching speeds. The GenX3 architecture offers improved efficiency compared to standard trench technologies. Confirm that the thermal management solution supports the device's power dissipation requirements under expected load conditions.
Part Context
This component belongs to the IXYS GenX3 family of high-voltage IGBTs. The series is engineered to balance low on-state voltage with manageable switching losses. It serves as a core switching element in power electronics where efficiency and reliability are critical.
Replacement Considerations
Check datasheets for alternative IXYS models within the GenX3 series. Verify compatibility regarding package dimensions, thermal resistance, and electrical ratings such as Vces and Ic when substituting.
