IXGA20N120B3-TRL

Overview

The IXGA20N120B3-TRL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing silicon technology and belonging to the GenX3 product family. It is housed in a D2PAK-3 (TO-263-3) surface-mount package designed for automated assembly via reel packaging. The device features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current rating of 80 A at 25°C, with a specified continuous current of 36 A under standard thermal conditions. Key electrical parameters include a collector-emitter saturation voltage of 2.7 V, a gate-emitter leakage current of 100 nA, and a power dissipation capacity of 180 W. The component operates within a temperature range from -55°C to +150°C.

Feature Summary

• Incorporates GenX3 trench technology for optimized switching performance and low conduction losses.
• Designed for surface-mount installation using the D2PAK-3 package to facilitate automated PCB assembly.
• Features a rugged single-chip configuration capable of handling high voltage blocking up to 1.2 kV.

Applications

• High-frequency switch-mode power supplies
• Motor control drives and inverters
• Induction heating systems

Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm the reel packaging configuration and tape-and-reel specifications. Ensure that the ordering part number matches the exact GenX3 series variant required for your circuit design. Cross-reference the datasheet revision date to validate all electrical characteristics and thermal resistance values before finalizing procurement orders.

Selection Notes

Select this component when a surface-mount IGBT with a 1.2 kV rating is required for compact designs. The D2PAK-3 package offers a balance between thermal performance and board space efficiency compared to through-hole alternatives. Consider the 2.7 V saturation voltage and 180 W power dissipation limits to ensure adequate heat sinking solutions are integrated into the system architecture for reliable operation.

Part Context

This device is part of the IXYS GenX3 portfolio, which utilizes advanced trench gate technology to improve switching speed and reduce energy losses. The IXGA20N120B3-TRL specifically targets applications requiring robust high-voltage switching in a surface-mount form factor. It serves as a modern alternative to older planar technologies, offering better performance metrics within the same voltage class.

Replacement Considerations

Direct substitutes may include other IXYS GenX3 devices in the TO-263-3 package with similar voltage and current ratings, such as the IXGH series or IXGT series variants, provided pin compatibility and thermal characteristics align with the existing design constraints.