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Product Detailed Parameters
- Description：IGBT 2500V 30A TO-263HV
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：2500 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：105 A
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 20A
- Power - Max：150 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：53 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263HV
- Grade：-
- Qualification：-
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Overview
The IXGA20N250HV is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, designed for high-voltage power switching applications. It features a maximum collector-emitter voltage (VCEO) of 2.5 kV and supports a continuous collector current of 30 A at 25°C. The device exhibits a collector-emitter saturation voltage of 3.1 V and handles a power dissipation of 150 W. It operates within a temperature range of -55°C to +150°C and utilizes an SMD/SMT TO-263 package configuration.
Feature Summary
- High voltage capability with a 2.5 kV collector-emitter breakdown rating
- Square Reverse Bias Safe Operating Area (RBSOA) for robust operation under fault conditions
- Short-circuit withstand capability of 10 microseconds
- Low saturation voltage of 3.1 V for efficient conduction
Applications
- High voltage industrial motor drives
- Uninterruptible power supply (UPS) systems
- High frequency induction heating equipment
Procurement Notes
Verify the specific manufacturing lot and RoHS compliance status directly with authorized distributors or the manufacturer before procurement. Confirm that the TO-263 package dimensions align with the target PCB footprint design. Ensure storage conditions meet moisture sensitivity level requirements to prevent package damage during soldering processes.
Selection Notes
Select this component when a single IGBT with a 2.5 kV rating and approximately 30 A continuous current capacity is required in a surface-mount form factor. Consider the 3.1 V saturation voltage and 150 W power dissipation limits against the thermal management capabilities of the final assembly. Verify that the 10 microsecond short-circuit tolerance meets the protection circuitry response times of the system design.
Part Context
This device belongs to the IXYS High Voltage IGBT product line, specifically engineered for demanding power electronics environments. It integrates advanced trench gate technology to optimize switching performance and conduction losses. The part is distinct from lower voltage variants and through-hole packages within the broader IXYS portfolio, targeting compact high-density designs.
Replacement Considerations
No official substitute part numbers are documented for this specific model. When evaluating alternatives, ensure the replacement matches the 2.5 kV voltage rating, 30 A current capacity, and TO-263 package outline. Verify compatibility of the gate threshold characteristics and saturation voltage to maintain original circuit performance parameters.
