IXGA24N120C3

Overview

The IXGA24N120C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the GenX3 series, manufactured by IXYS. It features a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 48A at 25°C. The device utilizes XPT technology to achieve a low saturation voltage of 2.7V. Packaged in a TO-263AB (TO-263) three-pin configuration, it supports screw or surface mounting. The component operates within a temperature range of -55°C to +150°C junction temperature and offers a power dissipation capacity of 250W.

Feature Summary

• GenerX3 trench gate technology for optimized switching performance
• XPT (eXtended Plateau Technology) for reduced saturation voltage
• Square Reverse Bias Safe Operating Area (RBSOA)
• High short-circuit capability

Applications

• Industrial motor drives
• Uninterruptible Power Supplies (UPS)
• Inverters and converters
• Induction heating systems

Procurement Notes

Verify the specific ordering suffix and package variant against the official IXYS datasheet to ensure compatibility with thermal management requirements. Confirm RoHS compliance status and manufacturing origin through authorized distributors. Request updated lead times as production cycles may vary. Validate that the component meets the specific electrical ratings required for the target application circuit design before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high voltage blocking capabilities combined with moderate current handling in a compact footprint. The TO-263 package facilitates efficient heat dissipation for medium-power designs. Consider the trade-off between the low on-state voltage and switching losses inherent to GenX3 technology when designing gate drive circuits. Ensure adequate thermal interface materials are selected to maintain junction temperatures within the specified operational limits during peak load conditions.

Part Context

This IGBT belongs to the IXYS GenX3 product family, which represents third-generation trench gate technology. The series is characterized by improved efficiency and robustness compared to earlier planar designs. The GenX3 line targets high-reliability industrial applications where switching speed and conduction losses are critical performance factors. This specific part number integrates advanced field-stop structures to enhance current density and thermal stability.

Replacement Considerations

Direct substitutes include other IXYS GenX3 devices with similar voltage and current ratings, such as the IXGH32N120A3 for higher current needs. Cross-brand replacements require matching Vces, Ic, Vce(sat), and package dimensions. Verify pinout compatibility and thermal resistance characteristics before substituting with components from manufacturers like Infineon or Mitsubishi.