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The IXGA48N60A3-TRL is a single N-channel GenX3™ Power Trench IGBT in a TO-263 (D2PAK) surface-mount package. It features a 600V collector-emitter voltage rating and a continuous collector current of 120A at 25°C, dropping to 48A at 110°C case temperature. The device utilizes PT technology for ultra-low saturation voltage (max 1.35V at 32A). Key electrical parameters include a gate threshold voltage of 3.0V to 5.5V, total gate charge of 110nC, and maximum power dissipation of 300W. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix '-TRL' against the manufacturer's official documentation to confirm the reel packaging configuration and quantity. Ensure the component matches the exact datasheet revision DS99581D(03/12) or later. Confirm RoHS compliance status through the supplier's declaration. Validate that the TO-263 pinout aligns with your PCB footprint design before finalizing orders.
Select this component for applications requiring high power density and efficient switching up to 5kHz. The TO-263 package facilitates surface-mount assembly. Consider the thermal resistance characteristics when designing heat sinks. Ensure the gate drive circuit can handle the specified gate charge and voltage limits. Evaluate the square RBSOA suitability for inductive load protection requirements.
This part belongs to the IXYS GenX3™ family of 600V Power Trench IGBTs. It shares core semiconductor characteristics with the IXGP48N60A3 and IXGH48N60A3 variants, which differ primarily in their physical packages (TO-220 and TO-247 respectively). All variants utilize the same silicon die technology optimized for low saturation voltage.
Direct functional equivalents include IXGP48N60A3 and IXGH48N60A3 from the same series. Cross-package replacements require verifying mechanical fit and thermal interface compatibility. Verify that any substitute maintains the required 600V rating and current handling capabilities.