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The IXGA48N60A3 is a single N-channel silicon IGBT from the GenX3 family, housed in a TO-263 (D2PAK) surface-mount package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 120 A at 25°C. The device exhibits an ultra-low saturation voltage of 1.35 V max at 32 A. Key electrical parameters include a gate charge of 110 nC, turn-on energy loss of 0.95 mJ, and turn-off energy loss of 2.9 mJ under standard test conditions.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches the required TO-263 footprint. Ensure thermal management design accounts for the specified junction temperature limits and power dissipation ratings to maintain reliability during operation.
Select this component for designs requiring high current density in a surface-mount form factor. The low saturation voltage minimizes conduction losses, while the GenX3 technology supports switching frequencies up to 5 kHz. Evaluate thermal resistance values to ensure adequate heat sinking for the intended load conditions.
This part belongs to the IXYS GenX3 series of 600V PT IGBTs. It shares technical characteristics with the IXGP48N60A3 and IXGH48N60A3, differing primarily in package configuration. The TO-263 package facilitates automated surface-mount assembly compared to through-hole alternatives.
Direct substitutes within the same family include IXGP48N60A3 and IXGH48N60A3. Verify pinout compatibility and thermal interface requirements when transitioning between package types.