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Product Detailed Parameters
- Description：IGBT PT 600V 75A TO-263
- Series：GenX3™
- Mfr：IXYS
- Package：Tape & Reel (TR)
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：250 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 30A
- Power - Max：300 W
- Switching Energy：410µJ (on), 230µJ (off)
- Input Type：Standard
- Gate Charge：77 nC
- Td (on/off) @ 25°C：19ns/60ns
- Test Condition：400V, 30A, 3Ohm, 15V
- Reverse Recovery Time (trr)：26 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The IXGA48N60C3-TRL is a GenX3™ series Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a Planar Technology (PT) structure with a 600 V collector-emitter voltage rating and a continuous collector current of 75 A at 25°C. The device is housed in a surface-mount D2PAK-3 (TO-263-3) package. Key electrical parameters include a maximum power dissipation of 300 W, a saturation voltage of 2.96 V, and a gate charge of 77 nC. Switching energies are specified as 410 µJ for turn-on and 230 µJ for turn-off under test conditions of 400 V, 30 A, and 3 Ω gate resistance.
Feature Summary
- Utilizes IXYS GenX3™ technology for optimized switching performance
- Designed for high-power switching applications requiring robust thermal management
- Surface-mount configuration facilitates automated assembly processes
Applications
- High-power industrial motor drives
- Switch-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific ordering suffix to ensure compatibility with required packaging formats. Confirm that the selected variant matches the intended surface-mount application requirements. Check manufacturer documentation for any recent product change notifications or lifecycle status updates prior to finalizing procurement plans.
Selection Notes
Select this component based on its 600 V blocking capability and 75 A current handling suitable for medium-power switching tasks. Evaluate the thermal characteristics of the D2PAK-3 package against the system's heat dissipation needs. Ensure the gate drive circuitry aligns with the specified gate charge and switching energy parameters for optimal efficiency.
Part Context
This IGBT belongs to the IXYS GenX3™ family, which extends the company's insulated gate bipolar transistor portfolio to 600 volts. The series is engineered to provide improved switching characteristics and reliability compared to previous generations, targeting demanding power electronics environments.
Replacement Considerations
The IXGP48N60C3 serves as a through-hole alternative within the same series. Designers must account for differences in package type and mounting style when substituting between surface-mount and leaded versions.
